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1 1 B + and 49 BF 2+ implants on a Varian VIISion-80 PLUS Ion Implanter from 2.0 to 8.9 keV at a dose of 1E15/cm 2 , and at various controlled and measured (in situ) peak beam-current densities, ranging from 3 to 600 μA/cm 2 , were investigated to study the effects of dose rate on the formation of ultra-shallow junctions. The implants and annealing...
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