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The etching scale was controled by the layball process and a focus ion beam (FIB) was used to investige the dry–wet etching (DWE) mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga + bombardment. Regardless of the Ag nanoshape deposition, the residual...
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