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In this paper, we propose a compact neuromorphic system that can work with four-terminal Si-based synaptic devices for spiking neural networks. The system consists of Si-based floating-body synaptic transistors and integrate-and-fire neuron circuit. The synaptic device can change its weight using floating-body effect and charge injection into the floating gate. The neuron circuit integrates signals...
In this study, the influence of sidewall thickness on the threshold voltage and on-current of L-shaped Impact-ionization metal-oxide-semiconductor transistor (I-MOS) is investigated. For the sidewall thickness in the range of 10 nm to 20 nm, the devices of thicker sidewall show lower on-current and higher threshold voltage. This is because the electron concentration between the channel and the most...
Various types of flash memory devices are fabricated on silicon-on-insulator (SOI) substrate for efficient isolation and higher program efficiency nowadays. Since metal-oxide-semiconductor field effect transistors (MOSFETs) on SOI has a floating body and corresponding effects, it is quite difficult to predict the program efficiency of SOI-based NOR-type flash memory device making use of channel hot...
70-nm I-MOS devices have been integrated with 70-nm TFETs for the first time by adopting a novel process method. The integration of the I-MOS device with the TFET is meaningful in that it compensates for weak points of each device and implements both high-performance and low-power functionality on the same substrate. Additionally, by using SOI substrate and modifying mask layout, ON/OFF current ratio...
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