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In this paper, we report the effects of two different types of dopants (n- and p-type semiconductors) on the unipolar resistive switching characteristics of a fully CMOS-compatible W/Si3N4/Si structure. The W/Si3N4/p+-Si device displayed a gradual reset transition, while the W/Si3N4/n+-Si device showed abrupt reset switching. The different reset switching behaviors of the devices can be explained...
In conducting the operation of the NAND-type flash memory array, program inhibition is performed by self-boosting of the potential of the floating silicon channel. However, the high program voltage substantially affects the adjacent cells sharing either the bit-line (BL) or the word-line (WL), which results in unwanted program operation, i.e., program disturbance, in the vicinity. In this work, the...
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