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The FIB Ga + irradiation damage on Si substrate under different ion dose ranging from 10 13 ions·cm −2 to 10 17 ions·cm −2 and its effective recovery were studied. Based on the characterization results of XPS depth profiles, Raman, electron microscopy and AFM, FIB Ga + implantation and the damage’s evolution and recovery after annealing treatment have...
Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.
PSP-based compact model of dynamically depleted SOI MOSFETs has been developed and verified using TCAD simulations. This development adopts the symmetric linearization method to the dynamically depleted SOI operation while retaining the highly developed description of the small geometry effects in the PSP models. The model has been implemented in circuit simulators, benchmarked and tested for convergence.
It's difficult to measure junction depth because the junction is not in horizontal direction in textured silicon solar cells. In this paper a new, accurate junction depth measurement technique for textured silicon solar cells is investigated. Both experience and experimental data indicate that the measurement technique we used is feasible.
In this paper, the problem of strain was discussed, which comes from the process of eliminating the bow by cooling. During this process, the deformation was analyzed by measuring strains at different places of a solar cell. At last, some phenomena were got by comparing strain caused by cooling and heating respectively.
Cooling was a very effective way to eliminate the bow of Silicon solar cell. In this paper, by a series of experiments, we found that during the cooling, the electrical characteristics and internal or external quantum efficiency nearly stayed the same, and the lifetime of minority carriers as well. The cooling was a available way to apply in industrial process.
This paper investigates the additional iron loss generated in the laminated silicon sheets of the core or the magnetic shields of large power transformers due to the leakage flux. A verification model is well established, and an efficient analysis method is implemented and validated. Both the magnetic and electric anisotropy of the oriented silicon steel sheets are taken into account in 3-D FEM eddy...
The authors describe the results of an experimental study of small-geometry effects in n- and p-channel polysilicon TFTs (thin film transistors) fabricated on quartz substrates. Short-channel effects are shown to be severe, with significant threshold shifts observed in devices with gate lengths of less than about 8 mu m and degradation in drain breakdown voltages for gate lengths below about 5 mu...
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