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PSP-based compact model of dynamically depleted SOI MOSFETs has been developed and verified using TCAD simulations. This development adopts the symmetric linearization method to the dynamically depleted SOI operation while retaining the highly developed description of the small geometry effects in the PSP models. The model has been implemented in circuit simulators, benchmarked and tested for convergence.
In this paper, a carrier-based modelling approach (CBMA) is extended to develop a unified compact model for the symmetric double-gate (DG) and surrounding-gate (SRG) MOS transistors with the same mathematic formulation via the parameter transformation. The unified model formulation makes it easy to handle different device structures with different physical solutions, avoiding the need to solve the...
We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all small-geometry effects without relying on the traditional threshold-voltage-based formulation. The new model is verified for a 90 nm node process (40...
The spline-collocation-based non-quasi-static model is extended to include small-geometry effects and to enable both small-signal and large-signal simulations. The new NQS model has been implemented into circuit simulators using both SP and PSP models and verified using RF test data. Additional verification is provided by comparison with the results of numerical simulations and with the MM11 channel...
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