Search results for: Nobuya Hiroshiba

Items from 1 to 11 out of 11 results

article

Layer-by-layer growth of precisely controlled hetero-molecular multi-layers and superlattice structures

Nobuya Hiroshiba, Jonathan P. Hill, Ryoma Hayakawa, Katsuhiko Ariga, more

Thin Solid Films > 2014 > 554 > C > 74-77

We demonstrate a technique for growing fine molecular films on a monolayer scale. We achieve layer-by-layer growth under thermally equilibrium condition by precisely controlling the conditions of an ultra-slow deposition technique. This technique is applicable to various kinds of p-type and n-type organic semiconductors and makes it possible to form a hetero-molecular interface (p-n junction) with...

article

Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block Copolymers

Sang-Min Park, Xiaogan Liang, Bruce D. Harteneck, Teresa E. Pick, more

ACS Nano > 2011 > 5 > 11 > 8523 - 8531

article

Study of the exciton relaxation and recombination processes of a heteromolecular interface fabricated by a molecular superlattice growth technique

Nobuya Hiroshiba, Kenta Morimoto, Ryoma Hayakawa, Toyohiro Chikyow, more

Chemical Physics Letters > 2011 > 512 > 4-6 > 227-230

The temperature dependences of the photoluminescence (PL) spectra of N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C ₈ )/Quaterrylene (QT) heteromolecular thin film and neat-PTCDI-C ₈ thin film were investigated to elucidate the effects of a heteromolecular interface on exciton relaxation and recombination processes. The PL spectra were deconvoluted into six components related...

article

Single‐Electron Tunneling through Molecular Quantum Dots in a Metal‐Insulator‐Semiconductor Structure

Ryoma Hayakawa, Nobuya Hiroshiba, Toyohiro Chikyow, Yutaka Wakayama

Advanced Functional Materials > 21 > 15 > 2933 - 2937

A sigle‐electron tunneling (SET) in a metal‐insulator‐semiconductor (MIS) structure is demonstrated, in which C₆₀ and copper phthalocyanine (CuPc) molecules are embedded as quantum dots in the insulator layer. The SET is found to originate from resonant tunneling via the energy levels of the embedded molecules, (e.g., the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular...

article

Ambipolar carrier transport in hetero-layered organic transistors consisting of quaterrylene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide

Nobuya Hiroshiba, Ryoma Hayakawa, Toyohiro Chikyow, Kiyoto Matsuishi, more

Organic Electronics > 2011 > 12 > 8 > 1336-1340

We examined the transistor properties of an N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C ₈ )/quaterrylene (QT) heteromolecular layer, in which the highly ordered molecular layers were stacked on the monolayer level. Ambipolar behavior was clearly observed when behaving as a field effect transistor (FET). The field effect mobilities and threshold voltages were evaluated to gain an insight...

article

Structural analysis and transistor properties of hetero-molecular bilayers

Nobuya Hiroshiba, Ryoma Hayakawa, Matthieu Petit, Toyohiro Chikyow, more

Thin Solid Films > 2009 > 518 > 2 > 441-443

We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N’-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C ₈ ) and quaterrylene. First, the structure and carrier conduction of PTCDI-C ₈ films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C ₈ /quaterrylene hetero-bilayer transistor. Based...

article

Impact of surface modification by addition of self-assembled monolayer for carrier transport of quaterrylene thin films

Ryoma Hayakawa, Nobuya Hiroshiba, Toyohiro Chikyow, Yutaka Wakayama

Thin Solid Films > 2009 > 518 > 2 > 437-440

Quaterrylene field-effect transistors (FETs) were formed on a silicon oxide (SiO ₂ ) layer and on an octadecyltrichlorosilane self-assembled monolayer (OTS-SAM). To elucidate the transport mechanisms in the respective devices, we examined the dependence of carrier mobility on film thickness and temperature. On the OTS surface, a marked increase in the carrier mobility was observed in the initial...

article

Growth and structural characterization of molecular superlattice of quaterrylene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide

Nobuya Hiroshiba, Ryoma Hayakawa, Matthieu Petit, Toyohiro Chikyow, more

Organic Electronics > 2009 > 10 > 5 > 1032-1036

A molecular superlattice consisting of alternate layers of N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C ₈ ) and quaterrylene was prepared by using an ultra-slow deposition technique. Film growth under equilibrium conditions with precise optimization of the substrate temperature enabled the layer-by-layer stacking of hetero-molecules at a single-layer level. The morphology of the films...

article

Stress Release Drives Growth Transition of Quaterrylene Thin Films on SiO ₂ Surfaces

Ryoma Hayakawa, XueNa Zhang, Helmut Dosch, Nobuya Hiroshiba, more

The Journal of Physical Chemistry C > 2009 > 113 > 6 > 2197 - 2199

article

FET properties of chemically modified carbon nanotubes

Ryotaro Kumashiro, Nobuya Hiroshiba, Naoya Komatsu, Takeshi Akasaka, more

Journal of Physics and Chemistry of Solids > 2008 > 69 > 5-6 > 1206-1208

Electric properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated-individual and spread-sheet samples. From the results of FET measurement for both samples, it was shown that p-type CNTs–FETs can be converted to...

article

C60 field effect transistor with electrodes modified by La@C82

Nobuya Hiroshiba, Katsumi Tanigaki, Ryotaro Kumashiro, Hirotaka Ohashi, more

Chemical Physics Letters > 2004 > 400 > 1-3 > 235-238

C ₆₀ field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C ₆₀ /La@C ₈₂ -FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C ₆₀ FETs. Another improvement in the field effect mobilities is...

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