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We succeeded in fabricating HVPE-grown Ga2O3 FP-SBDs with a record Vbr/sub> of over 1 kV. This is an important step in the research and development of Ga2O3 power devices toward practical applications and future commercialization. This work was partially supported by Council for Science, Technology, and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), "Next-generation...
The new wide-bandgap oxide semiconductor, gallium oxide (Ga2O3), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga2O3 is expected to be much larger than those of SiC and GaN due primarily to Ga2O3's extremely large bandgap of 4.5∼4.9 eV, which will enable...
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