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By using two sets of Raman systems with excitation lines of 514.5 and 632.8 nm, the influence of annealing ambience was investigated on the formation of cobalt silicides. The results show that a more uniform, compact and thermal stable cobalt silicide film can be formed in the hydrogen annealing ambience than that in the Ar annealing ambience. Two characteristic bands located at 305 and 325cm ...
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