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The electrochemical etching of (111) and (100) p-Si in buffered ammonium fluoride solutions (0.01-1.0mol dm -3 fluoride, pH 1.0-4.5) has been studied by voltammetry, electrochemical impedance spectroscopy and in situ ellipsometry. Measurements were performed in a flow cell to eliminate mass transport limitations. The presence of an oxide film in the electropolishing region was detected...
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