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An input/output characteristics of the inverter composed of the DNA/Si-MOSFET and the parasitic capacity was studied. The DNA was bridged between the Si electrodes those serve as the source and drain with the 120nm-gap-length. At VDD=0V and VDD=3V, the output characteristic was almost the same. The reason of this phenomenon is that the space charge layer of the DNA/Si-MOSFET changes due to the charge...
Coulomb blockade/staircase phenomena of deoxyribonucleic acid (DNA) molecule have been observed so far. Here, we show a non-Coulomb blockade/staircase phenomenon of holes in a mesoscopic scale $\lambda $ -DNA, which serves as a channel on SiO2/Si structure. It is considered that the phenomena are due to the penetration of the wave function in the DNA into the Si source and drain electrodes via the...
The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they...
We discovered the charge retention property of the field-effect transistor (FET) in a Si gate/SiO2/DNA channel structure. The DNA FET with the Si source and drain showed hole conduction, and the drain current was controlled by the gate voltage application. By inserting the refresh process of gate voltage application of −50V between each measurement, the current increase was restrained. This phenomenon...
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