The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Fan-out wafer-level-packaging (FO-WLP) technology is developed with the advantages of smaller package size, higher Input/Output (I/O) counts, lower cost, and better performance. In this study, the FO-WLP technology is applied to TSV-less inter-connection technology of 2.5D IC packaging and a novel RDL-first wafer level packaging is demonstrated. Firstly, a pre-coated laser release layer at the interface...
In this paper, we investigate reliability testing for a glass interposer. The test vehicle is an assembled glass interposer with a chip, a BT substrate. The structure of a glass interposer with two redistribution layers (RDLs) on the front-side and one RDL on the back-side has been evaluated and developed. Key technologies, including via fabrication, front-side RDL formation, microbumping, temporary...
In this paper, we show the process and integration results of small TSVs integrated by 300mm 3DIC BTSV process. The TSV size is from 2um to 3um (in diameter) with aspect ratio of 10. The achievements of this work are: 1) successful demonstration of 20um thin wafer process by ITRI's 300mm wafer thinning process; 2) 2∼3um TSV patterning and etching performed by backside TSV process; 3) Combination of...
In this paper, we investigated the reliability test for Glass interposer. The test vehicle is assembled glass interposer with chip, BT substrate, and PCB. The structure of a glass interposer with two RDL on the front-side and one RDL on the backside had been evaluated and developed. Key technologies, including via fabrication, topside RDL formation, micro-bumping, temporary bonding, silicon and glass...
In this paper, we investigated the assembly characterization for reliability test. The structure of a glass interposer with two RDL on the front-side and one RDL on the backside had been evaluated and developed. Key technologies, including via fabrication, topside RDL formation, micro-bumping, temporary bonding, glass thinning and backside RDL formation, were developed and integrated to perform well...
In this investigation, a SiP (system-in-package) which consists of a very low-cost interposer with through-silicon holes (TSHs) and with chips on its top- and bottom-side (a real 3D IC integration) is studied. Emphasis is placed on the fabrication of a test vehicle to demonstrate the feasibility of this SiP technology. The design, materials, and process of the top-chip, bottom-chip, TSH interposer,...
Primary approach of 3DIC packaging usually adopts organic substrates or silicon interposer as the intermedium between multi-integrated circuits (ICs) and printed circuit board. Current organic substrates face the limitations in poor dimensional stability, trace density and CTE mismatch to silicon. Silicon interposer is a good solution for high-pin-count ICs and high performance applications based...
Through glass via (TGV) interposer fabrication processes are critical techniques in 3D-IC integration, providing the short interconnection among different stacked chips and substrate. Nowadays, silicon is a mature material in semiconductor technology, but glass, a dielectric material, provides an attractive option due to its intrinsic characteristics for the advantages of electrical isolation, better...
As high-speed, high-density, and high-performance are the primary IC development targets, packaging technologies play a key role to bring out the best performance of those ICs. In this paper, an active component formed by an active chip embedded technology is developed for the package of a high speed DDR2 memory device. Embedding of semiconductor chips into an organic substrate provide a solution...
An ultra-thin, flexible package was successfully demonstrated in this paper. The integration of semiconductor chip and flexible substrate, development of ultra-thin chip technology, and embedded chip technology are the key topics. For the purpose of bendable, the embedded chip should be thin enough. The chips were thinned to less than 20 mum by mechanical grinding and plasma treatment process. Besides,...
Previously, the electronics devices are always integrated into a rigid substrate. Itpsilas stronger, but hardly compatible with Bio-tech or some implanted systems for human being whose packaging point should be more focusing on the flexibility or even the stretchability. Not only the packaging of the active devices but also the connections among them need to be more flexible. In other words, as to...
To prevent potential yield loss, achieve TSV with higher aspect ratio, improve the bonding reliability, and reduce the process cost, a clamped through silicon via (C-TSV) interconnection for stacked chip bonding is proposed and developed in this paper. The metal cap on pad design can not only be a bonding layer for other stacked die on it, but also performs as a protection stopper for blind vias drilled...
Wafer level chip stacked module by embedded IC packaging technology was studied in this paper. Wafers were treated to less than 50 mum thickness and then singulated. The prepared thin chips were stacked on to the base wafer and then embedded by dielectric layers (Ajinomoto build up film, ABF) lamination. Vias to both the pads on the analog chips and digital wafers were done by UV laser drilling process...
By properly incorporating wafer level package (WLP) and chip embedded processes, a type II chip-in-substrate package (CiSP) without ultra-thin chips is developed for high speed memory devices in this paper. According to the design concept of the type II CiSP, a hybrid process using build-up technologies in wafer level and COG-based (chip-on-glass) transfer bonding is explored to implement the JEDEC-compliant...
In this paper, chip to wafer stacking and embedding active components by wafer level technologies were described. The radio frequency (RF) module-like component was chosen as the test vehicle in this study. Analog wafer were treated to less than 50 mum thickness and then singulated. The thin chip were die bonded, by chip stacking method, on to the digital wafer and embedded by lamination of dielectric...
A flexible active E/O local bus module using multi-mode optical transmission performs an interconnection of flexible electronic-optical circuit board in board-to-board level. The proposed E/O module is compatible with traditional electrical interface in printed circuit board(PCB) and can be directly used in high speed module interconnection. A 17 cm long prototyping of the proposed E/O local bus module...
Flat panel displays (FPDs) are now getting more important role in the application of digital home and personal consumer electronics. For the future mobile application, the lack of flexibility and the decrement of weight will become the major challenges by using the glass substrate. The new choice of substrate material can provide the benefits to make the display become flexible that the current glass...
In this paper, a flexible active E/O local bus module using multi-mode optical transmission is proposed to perform board-to-board, chip-to-chip, or board-to-chip optical interconnection with compatibility to traditionally electrical interfaces. In this proposed scheme, high speed modules or chips on tradition printed circuit board (PCB) can be directly interconnected through a flexible active E/O...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.