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The voltage stability, charge-collection properties and dark current of segmented silicon sensors are influenced by the charge and potential distributions on the sensor surface, the charge distribution in the oxide and passivation layers, and by Si–SiO2 interface states. To better understand these phenomena, measurements on test structures and sensors before and after X-ray irradiation, and TCAD simulations...
Edge effects for square p+n pad diodes with guard rings fabricated on high-ohmic silicon are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately and the doping profile is determined. The results with and without edge corrections differ significantly. After edge corrections,...
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