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Multipactor and plasma discharge at windows are the major limiting factors in high power microwave HPM transmission and radiation[1-6]. Breakdown at the vacuum/dielectric interface is triggered by multipactor and finally realized by plasma avalanche in the ambient desorbed or evaporated gas layer above the dielectric1–10.
In this study a metal-insulator semiconductor field effect transistor (MISFET) was fabricated on an undoped (100)-oriented AlGaAs/GaAs heterostructure. This device has the ability to switch the charge carriers in the conduction channel between electrons and holes by switching the sign of the applied top gate voltage. The device was characterised at 0.3K and electron/hole transport measurements were...
This paper formulates generalized transformer efficiency associated with the applications of Above-IC multifilar transformers to multiport integrated passive devices (IPDs). The formulation derives the power loss ratio for a multifilar transformer in multiport configuration based on a terminated microwave network and then leads to the expression of passive efficiency using the concept of power conservation...
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