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This work attempts to reveal, by high-performance scanning transmission electron microscopy (STEM) nanoanalysis, the failure mechanisms at the Au/Pt/Ti/Si3N4 interface during local stress of SiGe HBT (Silicon Germanium Heterojunction Bipolar Transistor). We demonstrated that the presence of initial defects introduced during technological processes play a major role in the acceleration of degradation...
This paper compares two different approaches to estimate the reliability of mechanical components subject to degradation (wear, fatigue, etc.). This estimate is realized by considering the degradation drift (periodic or continuous measurement of the degradation level) from tests or exploitation. Two approaches are presented in this article. The first approach is based on a deterministic mechanical...
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