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This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter,...
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20–21.5 dB conversion gain, 5.6–6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
On-Die features available for validation and test on an integrated circuit play a major role in evaluating the performance of the functionality being realized by the circuit in a post-silicon environment and can considerably reduce time to market of the end-product. In the case of high-speed IO, it is also important to note that the type of on-die hooks required to debug and validate the performance...
This paper presents a new impulse based ultra-wide band (UWB) transceiver system designed in 90nm CMOS technology for UWB medical radar sensing and communication applications. The design is targeting for human heart motion detection and short range data communications. The transmitter is composed of a simple on-off keying (OOK) modulated impulse generator and a variable gain-controlled amplifier (VGA)...
An efficiency-enhanced CMOS full-wave rectifier with low dropout voltage is presented. Both the conventional and the proposed rectifiers have been fabricated in a 0.35 mum CMOS process. Experimental results show the output voltage of the proposed rectifier is greater than that of the conventional one. Moreover, the proposed rectifier improves efficiency by more than 10%, compared with the conventional...
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