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A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO2-based resistive random access memory (RRAM) device (< 1 × 3 nm2). This technology exhibits potential for application in atomic-scale memories. The 1 × 3 nm2 RRAM device exhibited an excellent performance, featuring a...
Several post wafer saw Al bond pad corrosion events were found with the defect size much larger than that of the conventional Al pad Al2Cu theta-phase galvanic corrosion. The large corrosion defect size has great of concern on degrading the wirebond interconnect reliability. To understand the cause of large size corrosion defect and find the possible solution, the evaluation including splits from...
The paper presents the electromigration behavior study of Cu-Ni nanocomposite for low-power electromagnetic microactuator fabrication. The nanocomposite is characterized based the striped with 50µm width and synthesized in the Cu plating bath with the 2g/L concentration of 50nm Ni nanopowders. About 2.03% Ni weight percentage in the Cu-Ni nanocomposite stripe is characterized using inductively coupled...
In this work, we proposed a hybrid PDMS-silicon electrostatic actuator with a large stroke under low driving voltages. The device features a staggered vertical comb-drive suspended by PDMS springs. Because of the flexibility of PDMS, an initial staggered displacement was naturally formed due to the self-weight of the device. Experimental results showed that the combination of polymeric springs and...
This paper demonstrates a low-power electromagnetic microspeaker with a PDMS membrane for hearing aids application. For a 1.76mW power input, the speaker with a 3.5mm in diameter and 3.3μm thick membrane can generate a sound with the sound pressure level (SPL) of 106dB @1kHz in a 2c.c. coupler.
Since 3D-IC becomes popular nowadays, solder micro-bumps plays an important role to develop TSV technology. This study verifies solder micro-bump efficiency via cracking as index. The micro-bump cracking is observed at the interface of intermetallic compound (IMC) layer after Si chip and Si carrier bonding. It was found that P-rich Ni layer will perform weaker and brittle solder joint by means of...
High density three dimensional (3D) interconnects formed by high aspect ratio through silicon vias (TSVs) and fine pitch solder microbumps are presented in this paper. The aspect ratio of the TSV is larger than 10 and filled with Cu without voids; there are electrical nickel and immersion gold (ENIG) pads on top of the TSV as under bump metallurgy (UBM) layer. On the Si chip, Cu/Sn solder microbumps...
We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n+ BD region and enter a program cell with residual energy due to nonequilibrium transport. Our measurement...
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