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A low-voltage low-power CMOS bridge resistance-to-frequency converter (RFC) with high linearity for Internet of Things (IoT) applications is presented. It is based on a new single stage folded-cascode hybrid transconductor topology dedicated for RFC. The transconductor is a hybrid combination of a level-shift flipped voltage follower (LSFVF) and a folded shunt-feedback voltage follower (FSFVF) to...
BACKGROUNDThe v‐raf murine sarcoma viral oncogene homolog B (BRAF) inhibitor (BRAFi) drugs dabrafenib and vemurafenib have high response rates in BRAF‐mutant, metastatic melanoma; however, 50% of patients progress by 7 months. In this study, the authors examined the nature and management of disease progression (PD) on BRAFi treatment, including characteristics and outcomes of patients who received...
In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the proposed small-signal equivalent circuit with a substrate coupling network and a substrate thermal noise...
Record-high drive current on the order of 3–5mA/μm is demonstrated in lateral silicon bipolar transistors on SOI. This is achieved by scaling quasi-neutral base width to below 10nm. The heavily doped collector enables the transistor to operate in high level injection regime without the detrimental base push-out effect. Measured cut-off frequency is the highest for a lateral bipolar and has a broad...
We report a successful implementation of epitaxially grown Phosphorus-doped (P-doped) embedded SiC stressors into SOI nMOSFETs. We identify a process integration scheme that best preserves the SiC strain and minimizes parasitic resistance. At a substitutional C concentration (Csub) of ~1.0%, high performance nFETs with SiC stressors demonstrate ~9% enhanced Ieff and ~15% improved Idlin against the...
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