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Ultra-high-vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO, low interfacial densities of states (Dit's) ~ 1011eV-1cm-2, and thermal stability at high...
High-performance self-aligned inversion-channel In0.75Ga0.25As n-MOSFETs using in-situ ultra-high-vacuum (UHV) deposited Al2O3/Ga2O3(Gd2O3) and ex-situ atomic-layer-deposited (ALD) Al2O3 as gate dielectrics have been fabricated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. A 1.2 mum-gate-length In0.75Ga0.25As MOSFET using Al2O3(2 nm-thick)/GGO(13...
In this work, for practical device integration in future, a self-aligned In0.53Ga0.47As MOSFET was successfully implemented, using molecular beam epitaxy (MBE) grown In0.53Ga0.47As as the channel, ALD-AI2O3 as the gate dielectric, and sputtered TiN as the gate metal. The key of the self-aligned process in fabricating inversion-channel III-V MOSFETs is not only to ensure good interface properly after...
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable...
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non...
Wafer-scale-assembly (WSA) technology has been developed for compact and light-weight applications at the Northrop Grumman Corporation. To insure successful insertion of WSA hermetic MMICs for military and space applications, high-reliability demonstration is essential. In this study, we performed two-temperature lifetesting to evaluate the reliability performance of WSA hermetic GaAs HEMT MMICs....
The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits...
In this paper the scalability of ALD HfO2 in passivating high indium content InGaAs were studied. A capacitance equivalent thickness (CET) of 1.0 nm has been achieved in this work without any surface pretreated process.
This paper presents an ultra-compact W-band 4-bit phase shifter integrated in a 5-layer wafer-scale assembly phased array system. The phase shifter was implemented using a reflective-type circuit topology, consisting of a 3 dB Lange coupler and a pair of reflective loads. GaAs HEMT switches were used for switching the loads to achieve the desired phase shifts. On-wafer measurements of the single-bit...
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