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We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130nm process. Two different geometries of the collecting electrode (namely “Apsel 3T 1 M 1 ” and “Apsel 3T 1 M 2 ”) was implemented to compare their charge collection...
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