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To study the electron transport properties in high electron mobility transistors (HEMTs), it is essential to have a correct estimation for electron density distribution. The introduction of back barriers in GaN-based HEMTs leads to a modified profile of a two-dimensional (2D) electron wave function, which can no longer be described by the standard Fang-Howard model. To address this change, a numerical...
Morton-Firth and Bray's stochastic simulator (StochSim) and Gillespie's stochastic simulation algorithm (SSA) are two important methods for stochastic modelling and simulation of biochemical systems. They have been widely applied to different biological problems. A key question is discussed here: Are these two methods equivalent? These two methods are compared using fundamental probability analysis...
This paper proposes the use of Karhunen-Loeve expansion (KLE) for accurate and efficient modeling of intra-die correlations in the semiconductor manufacturing process. We demonstrate that the KLE provides a significantly more accurate representation, of the underlying stochastic process compared to the traditional approach of dividing the layout into grids and applying principal component analysis...
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