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In article number 2007344, Daniel Bellet, David Muñoz‐Rojas, and co‐workers demonstrate transparent resistive switching devices entirely fabricated by open‐air approaches, without a deposition chamber. The threshold voltage can be tuned by adjusting the density of AgNWs, while maintaining a high LRS/HRS ratio. The researchers show the effect of oxide thickness on the threshold‐switching phenomenon,...
Threshold switching devices are fundamental active elements in more than Moore approaches, integrating the new generation of non‐volatile memory devices. Here, the authors report an in‐plane threshold resistive switching device with an on/off ratio above 106, a low resistance state of 10 to 100 kΩ and a high resistance state of 10 to 100 GΩ. Our devices are based on nanocomposites of silver nanowire...
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