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Optoelectronics
This image shows an illustration of the light trapping geometry used to capture low absorbing light used to identify the relative efficiency of different low absorption coefficient photo‐absorption pathways for SiC:V with varying co‐doping, shown for the cases considered in the middle and bottom rows. More details can be found in article number 2000315 by Lars F. Voss and co‐workers...
Vanadium‐doped SiC is under study for high‐power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect‐mediated electronic transition pathways from sub‐bandgap illumination in this material with low absorption and multi‐photon and multi‐path transition...
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