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We have studied epitaxial growth of Ge1−xSnx and SiyGe1−x-ySnx materials in 200mm and 300mm industrial CVD reactors using industry standard precursors. The growth kinetics of undoped GeSn were firstly studied via varying growth parameters including growth temperatures, GeH4and SnCl4precursor flows, which indicated that the material growth is highly dependent on surface kinetic limitations involving...
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