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We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic...
We investigated the effects of rapid thermal annealing (RTA) on the dynamic characteristics of the InAs/GaAs ten-layer quantum dot (QD) laser. Improvements in the temperature stability of bandwidth have been demonstrated upon annealing. We attribute the improvements to the following factors: 1) increase in internal quantum efficiency and 2) reduction in temperature dependency of differential gain...
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