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A dual-band 2.1GHz/5.2GHz low noise amplifier (LNA) which can operate at mobile band of 2.1GHz and WLAN band of 5.2GHz frequency is proposed. Input matching, noise matching and narrow-band amplifying are achieved at two frequency bands by adopting a switched inductive output load and a positive-negative feedback circuit. The proposed LNA is implemented in SMIC 0.13 μm CMOS technology with a supply...
A high linearity variable gain low noise amplifier (VGLNA) used for WCDMA receiver is presented. Power constrained simultaneous noise and input matching (PCSNIM) technique is adopted to design the inductive source degenerated LNA. To improve the dynamic range of the receiver, capacitive divider and current steering technique are adopted to implement the three gain modes. The chip was manufactured...
A low power CMOS fully-integrated on-chip inductor-less low noise amplifier (LNA) designed for short range devices (SRDs) in 0.25-mum CMOS process is presented. It is working at 315 MHz and 433 MHz. Common gate input topology is adopted to realize wideband impedance matching without tuning. Cross coupled common-gate input technique is adopted to improve the noise performance of conventional common-gate...
A 2.4 G single-chip radio-frequency (RF) transceiver front-end for IEEE 802.11b is integrated in 0.18 mum CMOS technology. The direct conversion architecture is adopted for both transmitter & receiver to minimize the on-chip and off-chip components required, which ensures low cost and low power consumption. The VCO oscillates at two times the carrier frequency to minimize PA pulling effect, which...
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