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The thermal stability and electrical properties of Cu contact on the NiSi substrate with a Ru/TaSiN barrier stack were investigated. The Ta/Si atomic ratio of the TaSiN is varied to optimize the barrier property. The results show that by introducing certain amount of Si into the TaN film, the Ru/TaSiN structure can be both thermally and electrically stable up to 500°C annealing for 30 minutes. The...
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