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The carrier behavior m DNA was examined using the DNA channel/SiO2/Si gate structure. In this case, electrodes with a gap of 120 nm using a substrate Si was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.7 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were...
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