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In this work the phase noise behavior of integrated LC VCOs in 130 nm SiGe BiCMOS technology is investigated. Three different VCO topologies i) Full NMOS ii) Full PMOS and iii) Complementary NMOS PMOS structures have been considered for investigation. Through circuit level simulations, the dependency of the phase noise on various parameters like frequency of operation, transistor type, transistor...
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