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On page 5688, Thomas P. Russell, Deirdre L. Olynick, and co‐workers show that high‐aspect‐ratio sub‐15‐nm silicon nanotrenches can be directly patterned from low temperature plasma etching of a block copolymer mask. This method allows the patterning of silicon with sub‐15‐nm structures on wafer size scale, and with high thoughput and relatively low cost.
High‐aspect‐ratio sub‐15‐nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated...
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