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A novel 4H-SiC metal semiconductor field effect transistor with localized high-doped P-buffer layer is proposed in this paper. Compared with conventional structure, because of the higher doped concentration in the P-buffer layer between the gate and the drain, greater depletion layer generates and extends to the channel, which reduces the concentration of channel carrier and modulates electric field...
A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. A MOS gate controlled spacer layer is shown to improve both DC and AC characteristics due to suppressed surface effect and decreased gate capacitance. A very high power density of 6.1 W/mm is obtained at S band operation. Compare with the well recognized buried gate structure, there is a significant improvement...
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