The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel low power 6-T SRAM cell operating in sub-threshold region based on CNFET is presented. Compared with the 4-T SRAM structure, the proposed 6-T SRAM structure can operate with 0.4V supply voltage, which is not possible for the 4-T structure. The proposed 6-T SRAM structure is optimized with the back-gate biasing technique for speed and stability improvements. Compared with a conventional 6-T...
As scaling down silicon semiconductor device feature size encounters great challenge nowadays, Carbon Nanotube Field Effect Transistor (CNFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Static Noise Margin (SNM) is an important expression of SRAM stability. Three factors, namely supply voltage, threshold voltage and transistor...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.