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A multilayer Al/HfN/Si system, prepared by the reactive sputtering method, was subsequently annealed at various temperatures in order to find out whether the HfN intermediate layer could serve as a diffusion barrier between metal (aluminum) and semiconductor (silicon). The structure of the system before and after annealing was investigated using thin film X-ray diffraction (grazing incidence XRD)...
The study reports a research into the mechanical properties of InGaN films deposited on sapphire by the metalorganic chemical vapor deposition method, being, as such, related to the very recent construction of the blue-emitting laser diode. The surface deformation of the films has been investigated by means of depth-sensing indentation experiments. Undoped films and those doped with Mg have been examined...
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