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Molybdenum disulfide (MoS2) is a promising 2D material since it has a finite band gap, and its electronic band structure depends on the layer thickness. The tunability of the gate voltage on band alignment of different MoS2 layers is analyzed. For this purpose, the multipurpose nanodevice simulation tool NEMO5 was altered by several new features: electronic bandstructure calculations in maximally...
This paper proposes a method to explore the design space of FinFETs with double fin heights. Our study shows that if one fin height is sufficiently larger than the other and the greatest common divisor of their equivalent transistor widths is small, the fin height pair will incur less width quantization effect and lead to better area efficiency. We design a standard cell library based on this technology...
Quantum transport simulations are performed in tunneling FETs (TFETs) with the gate electric field in-line with the tunneling junction direction (in-line TFETs). Charge self-consistency and thermalization effects are included in a semiclassical Poisson solution to compute the electrostatic potential. The obtained potential is then used for current calculation with the ballistic nonequilibrium Green’s...
As short channel effect (SCE) and subthreshold leakage is demonstrated to be controlled effectively from conventional planar MOSFETs to the FinFET, we used a three-dimensional simulation of nFinFET structure to analysis fin width effect on the FinFET performance from perspectives of both on-state and off-state. In this study, the major leakage path of FinFET with varied Wfin takes place at middle...
Today, the heat dissipation prevents increasing the clock frequency of transistors. The supply voltage cannot be lowered below about 1V without performance degradation in state-of-the-art MOSFETs. Tunneling Field Effect Transistors (TFETs) have been investigated intensively because of their ability to reduce the 60 meV/dec subthreshold swing (SS), which limits power scaling. Recently a record high...
We report the preparation and storage of frequency-uncorrelated cavity-enhanced SPDC entangled photons. The frequency correlation is eliminated with a suitable pulsed pump. The storage of a single photon entangled with another flying photon is demonstrated.
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