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Ever since the discovery of graphene, two-dimensional materials are promising to semiconductor industry. Monolayer molybdenum disulfide (MoS2) especially stands as a prospective candidate due to its stability in ambient environment; whereas, the direct bandgap makes it potential in electro-optical applications. Work function plays an important parameter for light-emitting diode and contact electrification...
In this work, we study dynamic characteristic of digital CMOS circuits of 16-nm HKMG bulk FinFET devices by optimizing fabrication windows of inline parameters. Key process parameters are ranked according to integrated circuit quiescent current (IDDQ) and delay of ring oscillators. IDDQ and delay are affected by the dual gate-spacer, the source/drain (S/D) proximity, the S/D depth, and the S/D implant...
A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and...
This work, for the first time, estimates the random dopant fluctuation (RDF) on DC characteristics of trapezoidal bulk FinFET devices by using an experimentally calibrated 3D quantum-mechanically corrected device simulation. For bulk FinFET devices under the same channel volume, we analyze the impact of geometry variation and RDF on the threshold voltage, the on-/off-state current with respect to...
In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-к / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations' impact on drain induced barrier lowering (DIBL). The main findings...
The HKMG bulk FinFET has been one of major device technologies. However, the bulk FinFETs' characteristics has been affected to different extents by various fluctuation sources, such as random dopants (RDs), interface traps (ITs), work functions (WKs), and the process variations (PVs) [1–5]. In this work, we for the first time study the 16-nm-gate HKMG bulk FinFET's characteristic fluctuation resulting...
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