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In this work, the DC characteristic variability of 14-nm-gate HKMG trapezoidal bulk FinFET induced by different line edge roughness (LER) is for the first time studied by using experimentally validated 3D device simulation. By considering a time-domain Gaussian noise function, we compare four types of LER: Fin-LER inclusive of resist-LER and spacer-LER, sidewall-LER, and gate-LER for the trapezoidal...
In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The...
In this paper, the surface roughness effects with Au particles which are simulated and discussed by solving a set of 3D Maxwell's equations is studied. Both the experimental and numerical results of this study show significant identification of Rhodamine 6G (R6G) using the fabricated samples.
In this work, we fabricate a surface-enhanced Raman scattering (SERS)-active substrate with low background signals using bottom-up approach. Staphylococcus aureus has been used as Raman probe to evaluate its enhancement capability. The experimental results of this study show that Staphylococcus aureus was well resolved using gold-coated hydrothermally roughened TiO2 substrates.
In this paper, we explore the effect of process variation on field emission characteristics in surface-conduction electron emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the nanometer scale gap is formed by the focused ion beam technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and three-dimensional Maxwell particle-in-cell...
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