AlN has successfully been applied to passivate the oxide/III–V interface; however, it changes both the metal work function (WF) and band alignment of the gate-stack and, thus, affects the power consumption of the devices. We found that the AlN layer induces a dipole $\delta = 0.18$ eV between HfO2 and substrate. The dipole value obtained from capacitance–voltage characteristics performs good agreement...
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