The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have evaluated characteristics of Ga-Sn-O (GTO) thin films deposited by RF magnetron sputtering with changing composition ratios of sputtering targets and deposition pressure. The optical transmittance is more than 80%, and the sheet resistance decreases as the deposition pressure increase for the thin films for Ga∶Sn=1∶3, On the other hand, for the thin films for Ga∶Sn=3∶1, both the transmittance...
Rare metal free SnO2 / Al2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using mixed SnO2 / Al2O3 powder target. The transmittance of the SnO2 / Al2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the SnO2 / Al2...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.