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Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect of up to −69% at 25 mT. The detailed measurement results are reported and the mechanism for generation of the MR effect is discussed.
We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. The field-effect mobility is 0.48 cm2·V−1·s−1 and the threshold voltage is 2.22 V. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.
We are developing artificial retinas using poly-Si thin-film transistors (TFTs), which is suitable for the epiretinal implant on the curved human eyeballs. In this study, we confirmed stimulus performance of poly-Si TFTs in in-vitro experiment for artificial retinas. It is found that correct output waveforms are observed using a CMOS inverter and ring oscillator. This means the stimulus performance...
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