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We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the output pulse became degraded for the 3-input NAND circuit. Moreover, we have fabricated a set-reset flip-flop (SR-FF) circuit using the 2-input NAND circuits and confirmed that the SR-FF circuit operated correctly.
We have developed maximum and minimum voltage sample and hold circuits employing operational amplifiers (OPAMPs) composed of polycrystalline silicon (poly-Si) thin-film transistors (TFTs). It was confirmed that the maximum and minimum voltages are successfully sampled and held. It was also confirmed that the restoring ratio has a peak near a certain value of the operation frequency. We would like...
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