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Bias Temperature Instability (BTI) is one of the key causes of reliability degradations of nano-CMOS circuits. While the long-term impact of BTI has been studied since years, the short-term implications of BTI on circuits are unexplored. In fact, in physics short-term BTI effects, i.e. instantaneous (i.e. sub μs) frequency dependent processes, have been recently reported. In order to design circuits...
Technology scaling noticeably increases the susceptibility of transistors to varied degradations induced by aging phenomena like Bias Temperature Instability (BTI) and Time-Dependent-Dielectric Breakdown (TDDB). Therefore, estimating the reliability of an entire computational system necessitates investigating how such phenomena will ultimately lead to failures — considering that aging starts from...
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