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Active gate driving has been demonstrated to beneficially shape switching waveforms in Si- and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with...
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
With switching transients as fast as 100 V/ns and a low threshold voltage of 1–2 V, GaN FETs in bridge-leg topologies are potentially vulnerable to crosstalk and the resultant unwanted partial turn-on, noise interference, and increased losses. Constant-strength gate drivers for GaN FETs limit switching speed to suppress crosstalk. In this work, active gate driving is shown to permit faster switching,...
The application of active gate driving to 40 V GaN FETs has previously been shown to reduce ringing and EMI-generating spectral content in the switch-node voltage waveforms. This paper, for the first time, shows active gate driving applied to 650 V GaN FETs, and the shaping of device voltages and currents during switching transients. A custom integrated active gate driver is used, which can dynamically...
Active gate driving provides an opportunity to reduce EMI in power electronic circuits. Whilst it has been demonstrated for MOS-gated silicon power semiconductor devices, reported advanced gate driving in wide-bandgap devices has been limited to a single impedance change during the device switching transitions. For the first time, this paper shows multi-point gate signal profiling at the sub-ns resolution...
Certain Electromagnetic Interference (EMI) performance characteristics that occur in data taken from practical systems are often difficult to attribute to time domain features as waveforms will tend to deviate from the idealized analytical case. This paper shows that by taking multiple derivatives of experimental data and comparing this with the expected characteristics of a typical switching waveform...
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