We demonstrate high-speed and high-power evanescently coupled waveguide integrated modified unitraveling carrier photodiodes. Over 105-GHz bandwidth along with 2 and 1.3 dBm RF output power at 100 and 105 GHz, respectively, has been achieved.
We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency.
We demonstrated a monolithic InP-based high-power high-speed waveguide integrated modified UTC photodetector. The chip delivers maximum RF output power levels of 8.9dBm to 5.1dBm in the frequency range between 60GHz and 120GHz.
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.