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Optical interconnections (interconnects) have been proposed as solutions to the ever-increasing bandwidth requirements and energy consumption in communication systems. Among possible photonic modulation strategies, the Ge quantum well (QW) based quantum-confined Stark effect (QCSE) stands out, as its strong electro-absorption effect allows for potentially lower power consumption and smaller device...
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. We demonstrate surface-normal asymmetric Fabry-Perot and microdisk resonator modulators employing Ge quantum wells grown on silicon.
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