The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Terahertz stimulated emission (4-6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon crystal has been studied. As shown CW laser operation of P, Sb, As donors become reachable due to the laser threshold decrease induced by the stress.
Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are presented and discussed.
Stimulated Raman emission at frequencies ranging from 4.8 THz to 5.1 THz and from 5.9 THz to 6.5 THz has been realized by optical excitation of arsenic donors in silicon. The Stokes shift is 5.42 THz, which is equal to the Raman-active donor electronic transition between the 1s(A1) ground state and the excited 1s(E) state. In addition, intracenter donor lasing has been observed when pumping on the...
In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed. The optimal doping concentration has been determined. The influence of the pump geometry on the laser...
New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2-1.8 THz; 2.5-3.4 THz, 5.0-5.2 THz and 6.1-6.4 THz, has been achieved from silicon crystals doped by phosphorus to ~1015 cm-3, under optical pumping by radiation of mid-infrared free electron laser at cryogenic temperatures...
Terahertz stimulated emission based on impurity-band optical transitions of phosphor donor centers embedded in Si/GeSi heterostructures is reported. THz emission was measured from selectively doped Si/GeSi structures excited by CO2 laser radiation. Amplification of 8-9 THz emission with the coefficient of 2-3 cm-1 is obtained for structures with gently strained selectively doped Si layers (Nd ap 10...
Results of experimental and theoretical study of terahertz stimulated emission from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in uniaxially stressed and liquid helium cooled silicon crystal are summarized and discussed. It is shown that compressive force of 1-1.5 kbar for P, Sb and of 2-3 kbar for As, Bi applied along {100} crystallographic orientations results...
New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz, 4.6 - 5.8 THz and 6.1 - 6.4 THz, has been achieved from silicon crystals doped by phosphorus and antimony to around 1015 cm-3 under optical pumping by radiation of mid-infrared free electron laser...
Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The Stokes shift of 3.16 THz is equal to the difference between the energies of the phosphorus ground state,...
Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p0 and 2pplusmn states lie in the range of 4-90 ps.
Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K). Thorough laser characterization and further optimization of the laser threshold and efficiency has been carried out.
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.