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The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the...
The threshold voltage variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal–oxide–semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses has been systematically analyzed. By investigating the dependence of variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function ...
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