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Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study is based on thin film SOI Fe-FETs using organic ferroelectric gate stacks (45 nm P(VDF-TrFE) 70%-30% layer on top of 10 nm thermal SiO2). The device...
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