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The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability...
In this work we report dense arrays of highly doped gate-all-around Si nanowire accumulation-mode nMOS-FETs with sub-5 nm cross-sections. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ≥ 2.5 GPa uniaxial tensile stress is reported for the first time. The deeply scaled Si nanowire shows low-field electron mobility of 332 cm2/V.s at room temperature,...
Self-aligned suspended-body single-walled carbon nanotube field-effect-transistors (SWCNT FETs) have been demonstrated with efficient and independent electrostatic control by two laterally placed independent gates spaced less than 100 nm away from the CNT channel. The operation of the suspended-body SWCNTFETs, in double-gate (DG) mode and single-gate (SG) mode, is analyzed in detail. Strong interface...
The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FETs (Fe-FETs), when the temperature is increased. We explain our results by Landau's theory, which is also used to develop and validate an analytical...
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