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We investigate high‐performance ZnO thin‐film transistors (TFTs) with a HfO2/Al2O3 bilayer high‐κ gate dielectric. The effects of atomic layer deposition process temperature (80, 100, 120, and 140 °C) of Al2O3 dielectric layer on device performance of ZnO TFTs are examined. When the process temperature is at 100 °C, the devices show the best electrical properties, such as a field‐effect mobility of...
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