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Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
We present the results of single event effect (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
We present the radiation response of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include digital, analog, linear, and hybrid micro- and optoelectronics.
We present the results of single-event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.
In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present the results of single event effects (SEE) testing and investigating the effects of space radiation on electronics. This paper is a summary of test results.
A 1 GeV/amu 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90° tilt irradiation yields a unique device response. These tilt angle effects need to be screened for, and if found, pursued...
A 1 GeV/u 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.
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